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 2SJ296 L , 2SJ296 S
Silicon P-Channel MOS FET
Application
LDPAK
High speed power switching
4
4
Features
* * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source * Suitable for Switching regulator, DC - DC converter * Avalanche Ratings
1
2
3 1 2 3
2, 4
1
3
1. Gate 2. Drain 3. Source 4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR IAP*** EAR*** Pch** Tch Tstg Ratings -60 20 -15 -60 -15 -15 19 50 150 -55 to +150 Unit V V A A A A mJ W C C
-------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C *** Value at Tch = 25 C, Rg 50
2SJ296 L , 2SJ296 S
Table 2 Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -60 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -50 V, VGS = 0 ID = -1 mA, VDS = -10 V
--------------------------------------------------------------------------------------- ---------------------------------------------------------------------------------------
20 -- -- V
---------------------------------------------------------------------------------------
-- -- -1.0 -- -- -- -- 0.075 10 -250 -2.25 0.095 A A V
--------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------- ---------------------------------------------------------------------------------------
ID = -8 A VGS = -10 V * ID = -8 A VGS = -4 V * ID = -8 A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz ID = -8 A VGS = -10 V RL = 3.75
-------------------------------------------------
-- 0.09 0.15
---------------------------------------------------------------------------------------
Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 8 12 -- S
---------------------------------------------------------------------------------------
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test See characteristic curves of 2SJ290 -- -- -- -- -- -- -- -- 1450 670 240 20 95 230 160 -1.5 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -15 A, VGS = 0 IF = -15 A, VGS = 0, diF / dt = 50 A / s
---------------------------------------------------------------- ---------------------------------------------------------------- --------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- --------------------------------------------------------------------------------------- ---------------------------------------------------------------------------------------
-- 160 -- ns
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